Single Supply,High Linearity,High Efficient PHEMT Power Devices and Amplifier for 2 GHz &5 GHz WLAN Applications

Park, Min ; Ahn, Hokyun ; Kang, Dong Min ; Ji, Honggu ; Mun, Jaekyoung ; Kim, Haecheon ; Cho, Kyoung Ik (2003) Single Supply,High Linearity,High Efficient PHEMT Power Devices and Amplifier for 2 GHz &5 GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

A single supply,high linearity,high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology.The PHEMT power device features Vth=-0.65 V,Vbdg=26 V,Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm.When matched on-wafer compromise between power and efficiency,the OIP3 at peak IP3 is 40.5 1Bm for 2 GHz and 37.0 dBm for 5.8 GHz,respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 %at 5 V under Vgs=0 V,GL=14.5 dB,OIP3=37.5 dBm.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Park, Min
Ahn, Hokyun
Kang, Dong Min
Ji, Honggu
Mun, Jaekyoung
Kim, Haecheon
Cho, Kyoung Ik
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:57
URI

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