Abstract

Diffusion behavior of delta-doped Si in InAlAs and InP was studied by using secondary ion mass spectroscopy. A significant broadening of the profile due to postgrowth annealing was observed in In0.52Al0.48As. In contrast, the depth profile of delta-doped Si in InP was scarcely changed by annealing. This indicates that the diffusion coefficient of delta-doped Si in InP is much smaller than that in In0.52Al0.48As. Suppression of Si diffusion by using a delta-doped InP layer as the carrier supply layer (CSL) improves the thermal stability of the InP-HEMT structures.