Equivalent-voltage description of low-frequency dispersive effects in large-signal fet models

Santarelli, A. ; Zucchelli, G. ; Paganelli, R. ; Vannini, G. ; Filicori, F. (2001) Equivalent-voltage description of low-frequency dispersive effects in large-signal fet models. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device controlled by equivalent port voltages and it is suitable for modelling based on standard nonlinear dynamic approaches, such as lumped-element equivalent circuits. The proposed approach is justified on the basis of a physically-consistent, charge-controlled description of the device, but the results are general and provide a valuable tool for taking into account dispersive effects in FETs by means of an intuitive circuit solution, in the framework of any existing nonlinear dynamic model of the associated non-dispersive device. The new equivalent-voltage description, identified on the basis of conventional measurements carried out under static and small-signal dynamic operating conditions, allows for the accurate prediction of dispersive effects above the frequency cut-off, but the formulation is still compatible, without for al modification, for the modelling of the device behaviour under signal excitations having spectral components in the dispersive low-frequency range. Preliminary results are presented which conferm the validity of the proposed approach.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Santarelli, A.
Zucchelli, G.
Paganelli, R.
Vannini, G.
Filicori, F.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:34
URI

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