The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier

Wu, L. ; Tao, R. ; Basaran, U. ; Luger, J. ; Dettmann, I. ; Berroth, M. (2004) The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

A 2W HiVP power amplifier for GSM mobile communication system is designed using 0.12-µm CMOS process. To solve the problem of low breakdown voltage in deep-submicron CMOS technology, the new High Voltage/High Power (HiVP) device configuration is used. With HiVP configuration, a large voltage can be divided by several devices, so that the voltage drop on each device is reduced. Hence the low-cost CMOS technology can be adopted for the design of power amplifier which will be used in a mobile phone. In this paper, an analytical overview of theory and practice of the HiVP power amplifier are discussed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Wu, L.
Tao, R.
Basaran, U.
Luger, J.
Dettmann, I.
Berroth, M.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:10
URI

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