Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements

Chartier, E. ; Piotrowicz, S. ; Jacquet, J.C. ; Floriot, D. (2004) Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper emphasizes for the first time the link existing between some small-signal power gain circles and the output load of maximum power in GaAs HBTs. We use the locus of power gain, named Minimum Conjugate- Termination Power, which have the value MSG/2K. MSG is maximum stable gain and K the stability factor. This method has been applied to the measurements by load-pull of 30W S-Band HBT power bar. By varying the bias of the amplifier, it is possible using only S-parameters data to localize accurately and quickly the locus of the power load.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Chartier, E.
Piotrowicz, S.
Jacquet, J.C.
Floriot, D.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:11
URI

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