InP-based monolithically integrated photoreceiver for 4-10GBit/S optoelectronic systems

Horstmann, M. ; Hardtdegen, M. ; Schimpf, K. ; Muttersbach, J. ; Lehmann, R. ; Marso, M. ; Kordos, P. (1996) InP-based monolithically integrated photoreceiver for 4-10GBit/S optoelectronic systems. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and optoelectronic properties of discrete devices and results on a front-end receiver at 1.3um are presented. The MSM photodetector exhibits a responsivity of 0.21A/W and a 3dB bandwidth up to 16GHz. The HEMT amplifiers have a cut-off frequency fT of 45GHz and fmax of 85GHz. A bandwidth up to 16GHz is achievable on optimized photoreceiver circuits.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Horstmann, M.
Hardtdegen, M.
Schimpf, K.
Muttersbach, J.
Lehmann, R.
Marso, M.
Kordos, P.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:38
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