Abstract

We present a large signal model for Si/SiGe HBTs using an Artificial Neural Network (ANN). The ANN is used to model the DC non-linearities of the intrinsic device. In this way, physical phenomena such as nonideal leakage currents and the Kirk effect can be modeled without time-consuming extraction. Capacitive nonlinearities are modeled by the well-known relationship between the capacitance and the junction voltage, ignoring the diffusion capacitance. By comparing ANN model results to measurements, we show that a good agreement for DC and nonlinear characteristics is obtained.