DC and Low Frequency Noise Characteristics of SiGe n-MODFET’s.

Rennane, A. ; Bary, L. ; Graffeuil, J. ; Plana, R. (2004) DC and Low Frequency Noise Characteristics of SiGe n-MODFET’s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper presents an investigation of the low frequency noise properties of SiGe based n MODFET’s through the characterization of both the gate current noise and the drain current noise including their correlation. Measurements versus bias and gate geometry have shown that this noise is generated through mobility fluctuations or carrier diffusion at the gate terminal and that carrier number fluctuations are involved in drain current fluctuations. Microwave residual phase noise measurements have shown that the up-conversion effect mainly occurs on the drain current noise.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Rennane, A.
Bary, L.
Graffeuil, J.
Plana, R.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:13
URI

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