Monolithic AlGaN/GaN HEMT SPDT switch

Kaper, Val ; Thompson, Richard ; Prunty, Tom ; Shealy, James R. (2004) Monolithic AlGaN/GaN HEMT SPDT switch. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

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Abstract

In this summary we present design and experimental results of a monolithic L/S band SPDT switch based on AlGaN/GaN HEMT’s. The switch was measured to have 0.87, 0.96, 1 dB insertion loss and 46, 42 and 41 dB isolation at 0.9, 1.8 and 2.1 GHz respectively. The switch also shows linear performance for the power levels up to 1 Watt in the insertion mode and more than 2 Watts in the isolation mode. Index Terms—AlGaN/GaN HEMT, MMIC, switch.

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