Application of SiGe:C BiCMOS to Wireless and Radar

Winkler, Wolfgang ; Heinemann, Bernd ; Knoll, Dieter (2004) Application of SiGe:C BiCMOS to Wireless and Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Heterojunction bipolar transistors with carbon-doped SiGe base layer (SiGe:C HBTs) showing fT and fmax values as high as 200 GHz have been developed and integrated into a 0.25µm CMOS platform. The combination of these high-performance HBTs with a modern CMOS backbone and a full menu of passive elements enables the fabrication of advanced wireless communication and radar systems. In this paper, we address the application of IHP’s 200GHz SiGe:C BiCMOS process in two fields, the wireless communication in the 60GHz ISM band and radar applications at 24GHz, 77GHz and at frequencies above 94GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Winkler, Wolfgang
Heinemann, Bernd
Knoll, Dieter
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:15
URI

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