Application of SiGe:C BiCMOS to Wireless and Radar

Winkler, Wolfgang and Heinemann, Bernd and Knoll, Dieter (2004) Application of SiGe:C BiCMOS to Wireless and Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Heterojunction bipolar transistors with carbon-doped SiGe base layer (SiGe:C HBTs) showing fT and fmax values as high as 200 GHz have been developed and integrated into a 0.25µm CMOS platform. The combination of these high-performance HBTs with a modern CMOS backbone and a full menu of passive elements enables the fabrication of advanced wireless communication and radar systems. In this paper, we address the application of IHP’s 200GHz SiGe:C BiCMOS process in two fields, the wireless communication in the 60GHz ISM band and radar applications at 24GHz, 77GHz and at frequencies above 94GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Winkler, Wolfgang
Heinemann, Bernd
Knoll, Dieter
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:15
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