Characterization and Modeling of InP DHBTs

Hu, Juntao ; Sun, Mike ; Ho, Wu-Jing ; Qin, Yue ; Li, Jiang ; Day, Ding (2002) Characterization and Modeling of InP DHBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

InP DHBTs have been characterized and their large signal model has been developed. The devices showed excellent DC characteristics without current blocking up to very high current levels. The peak fT is 160GHz and peak fmax reaches 190GHz. Compared to InGaP HBTs, the extent of thermal resistance improvement in InP DHBT strongly depends on the area of the B-C junction. To take advantage of the low thermal resistivity of InP material, proper layout designs need to be implemented. Extracted large signal model exhibited excellent fitting with measurements. Based on this model, simulated and measured circuit performance showed excellent agreement.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Hu, Juntao
Sun, Mike
Ho, Wu-Jing
Qin, Yue
Li, Jiang
Day, Ding
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:36
URI

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