An empirical large signal model for silicon carbide MESFETs

Sayed, Ahmed ; Boeck, Georg (2005) An empirical large signal model for silicon carbide MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

In this paper, a large signal table-based model forSiC MESFET is presented. A packaged commerciallyavailablehigh power MESFET device (CREE CRF24010)is adoptedfor the model development.The extracted bias-dependent elementsof the small signal model as well as the measured DC data are mathematically described by small modification of Angelov’s formulation. Dispersion between DC and RF characteristics of the drain current is also observed and interpreted.The new model is capable to predict small signal as well as large signal performance accurately. A single stage ultra broadband 5 Wpoweramplifierhas been developed to verify the derived model.A good agreement has beenobtained between simulated and measured results.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Sayed, Ahmed
Boeck, Georg
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DOI
Deposit date
08 Feb 2006
Last modified
17 Feb 2016 14:18
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