W-band low-loss wafer-scale package for RFMEMS

Min, Byung-Wook ; Rebeiz, Gabriel M. (2005) W-band low-loss wafer-scale package for RFMEMS. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper reports on the design and fabrication of a wafer-scale package for RF MEMS devices atW-band. Coplanar waveguide (CPW) lines on a high resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric interlayer for CPW feedthroughs underneath the gold sealing ring. A 130 µm high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF MEMS components.The designed feedthrough has an insertion loss of 0.19−0.26 dB at 75−110GHz with a return loss of<−20 dB(pertransition).The gold sealing ring is connected to the CPW ground to eliminate any parasitic ring effect of the gold sealing ring. The whole package has a measured insertion loss of 0.6−0.8 dB and return loss of<−20 dB at 75−110 GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Min, Byung-Wook
Rebeiz, Gabriel M.
Settori scientifico-disciplinari
DOI
Data di deposito
12 Dic 2005
Ultima modifica
17 Feb 2016 14:18
URI

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