Abstract

In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology.High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 µm2 exhibited peak fT and fMAX values of265and305GHz, respectively, at a collector currentdensity of 3.75 mA/µm2. Using this technology, a set of basic analog and digital IC building blocks,including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 Gb/s and beyond, have been successfully designed and fabricated.