Quantum-transport in nanostructured compound semiconductor devices: a generalized monte carlo approach.

Lugli, Paolo ; Di Carlo, A. ; Ragazzi, Stefano ; Rossi, Fausto (1997) Quantum-transport in nanostructured compound semiconductor devices: a generalized monte carlo approach. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

We present a theoretical investigation of quantum-transport phenomena in semiconductor nanostructures. In particular, a generalization to "open systems" of the well-known Semiconductor Bloch equations is proposed. Com­pared to the conventional Bloch theory, the presence of spatial boundary conditions manifest itself through self-energy corrections and additional source terms in the ki­netic equations, which are solved by means of a general­ized Monte Carlo simulation. The proposed numerical ap­proach is applied to the study of quantum-transport phe­nomena in double-barrier resonant tunneling diodes and to the scattering-induced suppression of Bloch oscillations in serniconductor superlattices.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Lugli, Paolo
Di Carlo, A.
Ragazzi, Stefano
Rossi, Fausto
Subjects
DOI
Deposit date
23 Nov 2005
Last modified
17 Feb 2016 14:21
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