C-Band Resistive SiC-MESFET mixer

Andersson, Kristoffer ; Eriksson, Joakim ; Rorsman, Niklas ; Zirath, Herbert (2002) C-Band Resistive SiC-MESFET mixer. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

In this paper the design and characterization of a linear C-band single ended resistive SiC-MESFET mixer is presented. The mixer has a minimum conversion loss of 7.8 dB and has a third order intermodulation intercept point of 30.3 dBm. The mixer is designed using a harmonic-balance simula-tion load-pull approach. This design method is especially use-ful for high-level mixers, where small-signal approximations cannot be used.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Andersson, Kristoffer
Eriksson, Joakim
Rorsman, Niklas
Zirath, Herbert
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:37
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