Optimization of the noise resistance of MESFET's and hemt's for CAD of microwave low-noise amplifiers

Caddemi, A. and Sannino, M. (1997) Optimization of the noise resistance of MESFET's and hemt's for CAD of microwave low-noise amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
Full text available as:
[img]
Preview
PDF
Download (1MB) | Preview

Abstract

Among the noise parameters expressed in the reflection coefficient form ( Fo, IFOI, /Fo and rn ), the noise resistance rn is of critical importance lo the design of low-noise receivers. Very low values of rn allow for optimizing the performance of broad band amplifiers in receiver front-ends. We here present an analysis performed on typical circuit models of FET's which was aimed at assessing the key elements influencing the behavior of rn at microwave frequencies. We found that the noise performance can be improved by tuning the value of the input (gate, source) inductances which are responsible of the U shaped curves typically observed for rn in MESFET's and HEMT's.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Caddemi, A.
Sannino, M.
Subjects
DOI
Deposit date
23 Nov 2005
Last modified
17 Feb 2016 14:22
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^