Electromechanical resonances of SiC and AlN beams under ambient conditions

Brueckner, K. ; Förster, Ch. ; Tonisch, K. ; Cimalla, V. ; Ambacher, O. ; Stephan, R. ; Blau, K. ; Hein, M. A. (2005) Electromechanical resonances of SiC and AlN beams under ambient conditions. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

MEMS resonators offer great potential for RF sensor and filter applications. A semiconductor process has been used to prepare SiC and AlN beam resonators. The metallised beams are excited by an RF current in a perma-nent magnetic field. The resonant response is detected by the induced voltage. Despite the weakness of the signal, accurate detection has been achieved in the time domain, under ambient conditions in a magnetic field of about 0.5 T. The resonant response bears valuable information on the structural quality of the material and identifies potential for further improvement. The time domain technique presents an elegant approach to sensing applications.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Brueckner, K.
Förster, Ch.
Tonisch, K.
Cimalla, V.
Ambacher, O.
Stephan, R.
Blau, K.
Hein, M. A.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:23
URI

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