High linearity of double channel GaAs pHEMT using a very high selective wet etching

Hue, X. and Boudart, B. and Bonte, B. and Crosnier, Y. (1999) High linearity of double channel GaAs pHEMT using a very high selective wet etching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text available as:
[img]
Preview
PDF
Download (1MB) | Preview

Abstract

Realisation and characterisation of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMT's, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity of the drain current and the threshold voltage values have been obtained. This high linearity is confirmed by a quasi flat transconductance over a wide gate source voltage. Power and intermodulation distortion at 16 GHz are also reported. A maximum output power of 1.1 W/mm and an IP3 value of 25 dBm have been measured.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Hue, X.
Boudart, B.
Bonte, B.
Crosnier, Y.
Subjects
DOI
Deposit date
16 Jan 2006
Last modified
17 Feb 2016 14:26
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^