Investigation of IMD asymmetry in microwave FETs via volterra series

Colantonio, P. ; Giannini, Franco ; Limiti, Ernesto ; Nanni, Antonio (2005) Investigation of IMD asymmetry in microwave FETs via volterra series. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text disponibile come:
[thumbnail of GA052256.PDF]
Anteprima
Documento PDF
Download (283kB) | Anteprima

Abstract

IMD asymmetry generation and its asymmetrical behaviour are discussed and clarified in this contribution using a Volterra series approach. The approach has been applied to a power PHEMT device for X-Band application. The effects of harmonic terminations have been clarified, stressing the relevance of baseband terminations and in particular of the output susceptance. Simplified expressions are inferred to clarify the effects of output terminations. Finally, the opportunity to choose a suitable fundamental and second harmonic output termination to reduce intermodulation asymmetry is discussed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Colantonio, P.
Giannini, Franco
Limiti, Ernesto
Nanni, Antonio
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:26
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^