The effect of the first barrier thickness on resonance tunnelling and carrier accumulation in undoped single quantum well infrared photodetectors

Gurusinghe, K. K. M. N. ; Andersson, T. G. ; Premaratne, K. (1999) The effect of the first barrier thickness on resonance tunnelling and carrier accumulation in undoped single quantum well infrared photodetectors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

The electrical behaviour of an undoped, MBE-grown, asymmetric thickness-double barrier single quantum well (QW) infrared photodetector structures were studied. The structures consisted of 100-200 A thick Al0.27Ga0.73As emitter barrier, a 40 A thick GaAs quantum well (QW) and a 500 A thick Al0.27Ga0.73As collector barrier. In order to describe the current generation mechanisms, the resonance current and the non-resonance current from emitter contact to QW, and the field emission current from the QW were simulated by numerical calculations. Calculated and the measured currents were in good agreement. Our result showed that the QW carrier density increased with reduced emitter barrier thickness enhancing the detector performance but at the cost of increased noise levels with dark current.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Gurusinghe, K. K. M. N.
Andersson, T. G.
Premaratne, K.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:27
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