Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors

Asif Khan, M. and Shur, M. S. and Gaska, R. (1999) Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

We report on AlxInyGal-x-yN-GaN heterojunctions grown on sapphire and 6H/4H SiC substrates using a low pressure MOCVD. Based on a linear extrapolation of lattice constants as functions of molar fractions, we estimate that quaternary AlxInyGal-x-yN layers with Al/In mole fraction ratio of 5 should be nearly lattice-matched to GaN. The independent control of strain and of the band offset has been confirmed by X-ray and photoluminescence data. For AlxInyGal-x-yN-GaN junctions with barrier thickness less than 50 nm and varying alloy compositions (x from 0.1 to 0.2 and y from 0.00 to 0.02), room temperature sheet-carrier density and mobility values ranging from 0.5-1.5 x 1013cm ~2 and 1000-1500 cm2V-1sec-1 were measured. The mobility values increase by about a factor of 5 upon cooling to 77 K. This establishes the presence of the two-dimensional electron gas at the AlxInyGal-x-yN-GaN heterojunction interface and confirms a high quality of heterointerfaces. We also fabricated AlxInyGal-x-yN-GaN HFETs with the state-of-the art performance. The fabrication technology for these devices is substantially different from that for conventional AlGaN/GaN HEMTs. We will report on DC and microwave characteristics of these devices and compare these characteristics with those for conventional GaN-based HFETs.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Asif Khan, M.
Shur, M. S.
Gaska, R.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:27
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