Interface properties and electrical characteristics of III-V nitride-based MISFETS

Alekseev, Egor ; Eisenbach, Andreas ; Pavlidis, Dimitris (1999) Interface properties and electrical characteristics of III-V nitride-based MISFETS. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text disponibile come:
[thumbnail of GAAS_99_034.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

III-V Nitride Based MISFETs have been studied using AIN/GaN heterostructures grown by MOCVD at the University of Michigan. MIS structures fabricated on such materials showed very low interface state density Dit values of -lx1011cm-2eV-1. The maximum drain current of AIN/GaN MISFETs made on these materials was greater than 700mA/mm, while drain-source breakdown was 30 V and drain-gate breakdown was 40V. Devices with a gate length of 2(j.m exhibited a peak transconductance of 136mS/mm at VGS=1V, which exceeds previously reported results.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Alekseev, Egor
Eisenbach, Andreas
Pavlidis, Dimitris
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:27
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^