Interface properties and electrical characteristics of III-V nitride-based MISFETS

Alekseev, Egor ; Eisenbach, Andreas ; Pavlidis, Dimitris (1999) Interface properties and electrical characteristics of III-V nitride-based MISFETS. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text available as:
[img]
Preview
PDF
Download (1MB) | Preview

Abstract

III-V Nitride Based MISFETs have been studied using AIN/GaN heterostructures grown by MOCVD at the University of Michigan. MIS structures fabricated on such materials showed very low interface state density Dit values of -lx1011cm-2eV-1. The maximum drain current of AIN/GaN MISFETs made on these materials was greater than 700mA/mm, while drain-source breakdown was 30 V and drain-gate breakdown was 40V. Devices with a gate length of 2(j.m exhibited a peak transconductance of 136mS/mm at VGS=1V, which exceeds previously reported results.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Alekseev, Egor
Eisenbach, Andreas
Pavlidis, Dimitris
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:27
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^