90 GHz amplifier fabricated by a low cost PHEMT technology

Werthof, A. and Grave, T. and Kellner, W. (1999) 90 GHz amplifier fabricated by a low cost PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A medium power W-band amplifier has been designed and fabricated using a low cost production oriented PHEMT technology which is based only on optical stepper lithography. The 3-stage amplifier utilizes coplanar transmission lines which results in a compact chip size of 1x2 mm2. A gain of 10.4 dB is achieved at a frequency of 92 GHz in conjunction with 10.6 dBm output power for 3 dB gain compression.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Werthof, A.
Grave, T.
Kellner, W.
Subjects
DOI
Deposit date
12 Dec 2005
Last modified
17 Feb 2016 14:28
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