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Werthof, A. ; Grave, T. ; Kellner, W.
(1999)
90 GHz amplifier fabricated by a low cost PHEMT technology.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
A medium power W-band amplifier has been designed and fabricated using a low cost production oriented PHEMT technology which is based only on optical stepper lithography. The 3-stage amplifier utilizes coplanar transmission lines which results in a compact chip size of 1x2 mm2. A gain of 10.4 dB is achieved at a frequency of 92 GHz in conjunction with 10.6 dBm output power for 3 dB gain compression.
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