DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches

Chee, Joolien ; Karru, Ratnakar ; Fisher, Timothy S. ; Peroulis, Dimitrios (2005) DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper reports on the growth, patterning, and characterization of plasma-enhanced chemical vapor deposition (PECVD) thin diamond film for DC-65 GHz applications. Nanocrystalline films are successfully demonstrated with an average grain size of less than 60 nm that can replace conventional low-quality dielectrics in RF MEMS switches. In addition to their excellent surface properties, the diamond film has negligible RF loss up to at least 65 GHz, but non-zero DC conductivity of approximately 0.2 μS/m that allows the film to provide a conductive path for potential trapped charges. Such films are envisioned to be integrated in today’s capacitive RF MEMS switches that suffer from charge-induced stiction.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Chee, Joolien
Karru, Ratnakar
Fisher, Timothy S.
Peroulis, Dimitrios
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:30
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