Accurate nonlinear resistive FET modeling for IMD calculations

García, José A. ; Pedro, José C. ; Carvalho, Nuno B. ; Mediavilla, Angel ; Tazón, Antonio (1998) Accurate nonlinear resistive FET modeling for IMD calculations. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

This work discusses the nonlinear modeling procedures required for intermodulation distortion (IMD) calculations of MESFETs biased in the resistive (linear) region. An automatic full two-sided characterization of Ids(Vgs, Vds) is compared against the previously published extraction of Ids(vds) in this problematic region. It is shown that this one-sided Taylor series extraction is insufficient for most applications of the FET in its triode zone, and thus an alternative method is proposed.

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