GaN heterostructure field effect transistors

Adesida, I. and Ping, A.T. (1998) GaN heterostructure field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demonstrated by these devices at microwave frequencies. The prospects of utilizing the devices for high power integrated amplifiers are excellent although the issue of thermal management will need to be addressed especially for devices and circuits on sapphire.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Adesida, I.
Ping, A.T.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:33
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