The anisotropy of the in-plane dispersion relations of the hole subbands of GaAs-GaAlAs quantum well

Denisenko, V.L. (1996) The anisotropy of the in-plane dispersion relations of the hole subbands of GaAs-GaAlAs quantum well. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

The in-plane dispersion relarions of the valence sub- bands of GaAs - Ga0.7Al0.3As quantum well are calcu- lated within the envelope function approximation. The anisotropy related with the difference between the Lut-tinger parameters ?2 and ?3 is taken into account con- sistently. The anisotropy proved to be considerable for the ground valence subbands of heavy and light holes and the great values ok k. The cross sections of the constant-energy surfaces of the valence subbans by the kxky plane are built. The envelope wave functions of the valence subbands as the mixture of the hole states dis-tinguished in mJ at k=0 are found. The change of the percental contribution of the hole states different in mJ to the resultant state with k varying is investigated.

Abstract
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Conference or Workshop Item (Paper)
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Denisenko, V.L.
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Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:38
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