Light emission from direct and phonon-assisted processes in AlGaAs/GaAs HBT's

Villa, S. ; Lacaita, A. L. ; Di Carlo, A. ; Lugli, P. (1996) Light emission from direct and phonon-assisted processes in AlGaAs/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

In this work we present a calculation of electroluminescence spectra from an AlGaAs/GaAs heterojunction bipolar transistor (HBT) over the near-infrared and visible range (0.8-2.5 eV) obtained coupling a self-consistent Monte Carlo with minority carrier transport simulation to a nonlocal-pseudopotential algorithm. We compute both direct and phonon-assisted optical transition rates.

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