Comparative evolutions of short gate InGaAs channel HEMTs on InP and GaAs at cryogenic temperatures

Aniel, F. ; Sylvestre, A. ; Jin, Y. ; Crozat, P. ; de Lustrac, A. ; Vernet, G. ; Adde, R. (1996) Comparative evolutions of short gate InGaAs channel HEMTs on InP and GaAs at cryogenic temperatures. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

The properties and performances from 300K down to 50K of short gate InGaAs channel HEMTs on GaAs and InP substrates are compared. Original data are presented particularly how depend on temperature the capacitances, the transconductance and the cut-off frequencies. The results are interpreted in term of enhanced short channel and trapping effects due to high electric fields. The temperature evolutions of the device intrinsic parameters are compared versus technology, gatelength and biases.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Aniel, F.
Sylvestre, A.
Jin, Y.
Crozat, P.
de Lustrac, A.
Vernet, G.
Adde, R.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:38
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