A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier

Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; Van der Zanden, K. ; Van Hove, M. ; De Raedt, W. ; Van Rossum, M. (1996) A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

In this paper, the performance of both GaAs and InP-based 0.15um dual-gate HEMTs in a cascode configu­ration is demonstrated by the successful design and realisation of a number of coplanar amplifiers. For a reactively matched single-stage GaAs PHEMT amplifier a gain of 20.9dB is obtained at 23GHz. At millimetre-wave frequencies, this gain can be further improved by using InP-based HEMTs as is shown by the realisation of a single-stage LM HEMT dual-gate amplifier with a stable gain of 16.4 dB and a good in-and output matching at 58.5 Ghz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Baeyens, Y.
Schreurs, D.
Nauwelaers, B.
Van der Zanden, K.
Van Hove, M.
De Raedt, W.
Van Rossum, M.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:38
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