K-band monolothic VCO using PHEMT technology

Ahdjoudj, Mourad ; Boudiaf, Ali ; Pouvil, Pierre (1996) K-band monolothic VCO using PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

An appropriate nonlinear design methodology based on the optimisation of the load cycles is applied for a K-band MMIC VCO using 0.2 um GaAlAs/GaInAs/GaAs Pseudomorphic HEMT technology. A tuning range over 13.5% bandwidth (22.5-25.8 GHz) is obtained, with a high sensitivity of 4.5 GHz/V. A constant output power of 6 dBm and a phase noise level less than - 85 dBc/Hz at 1 MHz offset from the carrier, were measured over the tuning range.

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