K-band monolothic VCO using PHEMT technology

Ahdjoudj, Mourad ; Boudiaf, Ali ; Pouvil, Pierre (1996) K-band monolothic VCO using PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

An appropriate nonlinear design methodology based on the optimisation of the load cycles is applied for a K-band MMIC VCO using 0.2 um GaAlAs/GaInAs/GaAs Pseudomorphic HEMT technology. A tuning range over 13.5% bandwidth (22.5-25.8 GHz) is obtained, with a high sensitivity of 4.5 GHz/V. A constant output power of 6 dBm and a phase noise level less than - 85 dBc/Hz at 1 MHz offset from the carrier, were measured over the tuning range.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Ahdjoudj, Mourad
Boudiaf, Ali
Pouvil, Pierre
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:39
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