Towards a model of GaAs MESFETs for the design of cryogenic integrated circuits.

Camin, D. V. ; Pessina, G. ; Previtali, E. ; Pillan, Margherita (1994) Towards a model of GaAs MESFETs for the design of cryogenic integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

The read-out of cryogenic detectors for nuclear and particle physics, requires compatible front-end electronics operating at low temperature. GaAs MESFETs exhibit suitable DC and noise characteristics at the temperatures of interest (77 K and 4 K). Since at cryogenic temperatures the electrical characteristics of the GaAs MESFETs differ significantly from those typical of 300K, a new model must be developed to employ computer circuit simulation during the design.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Camin, D. V.
Pessina, G.
Previtali, E.
Pillan, Margherita
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:41
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