A GaAs power chip set for 3 V cellular communications

Puechberty, Eric ; Masliah, Denis ; Delhaye, E. ; Herrera, Amparo (1994) A GaAs power chip set for 3 V cellular communications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

This paper presents a chip set operating at 3 V supply voltage for cellular communications at L-band. A high efficiency power amplifier with a high packing density is reported. It makes use of high power-added-efficiency of MESFET devices in saturated class AB, and harmonic enhancement for the matching circuits. This three stage MMIC amplifier delivers 27 dBm output power with 35 % of power added efficiency with 0 dBm input power. A power switch is also described which achieves a typical insertion loss in the (0.8 dB, 1.0 dB) range and performs 20 dB isolation between the Rx (Receive) and Tx (Transmit) chains. PML also proposes a power MESFET that achieves 33 dBm output power with 55 % drain efficiency and 6 dB associated gain at 1800 MHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Puechberty, Eric
Masliah, Denis
Delhaye, E.
Herrera, Amparo
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:42
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