Test set-ups for fast measurement of monolithic integrated circuits from on-wafer to system. application to a novel GaAs monolithic transimpedance amplifier for high speed optical communication systems

Dorta, P. ; Salazar-Palma, M. ; Casao, J.A. ; Cáceres, J.L. ; Perez, J. (1992) Test set-ups for fast measurement of monolithic integrated circuits from on-wafer to system. application to a novel GaAs monolithic transimpedance amplifier for high speed optical communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

A fast, accurate and economical method for fully characterizing MMiCs from on -wafer to system measurements is presented as well as the corresponding set-ups. The method is applied to the evaluation of a GaAs monolithic transimpedance amplifier for the receiver of a high speed optical communication system. The device was firstly DC and RF measured on-wafer and on-chip in order to test the dispersion as well as for an initial selection of the chips. Using a test-fixture designed for fast on-carrier measurements the selected chips were tested on-carrier. Finally, employing the same carrier but a different test-fixture, optical/electrical measurements were done to evaluate the subsystem behavior. The efficiency of the measurement method is demonstrated in one hand and in the other the test results show that a transimpedance amplifier of excellent performances for high speed rate optical communication systems has been obtained.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Dorta, P.
Salazar-Palma, M.
Casao, J.A.
Cáceres, J.L.
Perez, J.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:45
URI

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