A small-signal and noise model for the physics-based design and optimization of GaAs MESFET's for hybrid and monolithic MIC's

Ghione, G. ; Bonani, F. ; Pirola, M. ; Naldi, C.U. ; Sporkmann, T. (1992) A small-signal and noise model for the physics-based design and optimization of GaAs MESFET's for hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

The paper describes a two-dimensional physical small-signal and noise model for GaAs MESFET's. The model can provide, on the basis of physical and geometrical input parameters only, a complete small-signal and noise performance characterization. The noise model is based on the efficient implementation of the classical impedance-field method for noise analysis within the framework of a frequency-domain numerical drift-diffusion physical model. Attention is devoted to the experimental validation of the model, which is carried out on a realistic case study (a 0.6um GMMT MESFET) by testing the DC, the small-signal and noise models against measurements. The role played by the high-field diffusivity in noise simulation is stressed and it is shown how a physics-based model for this parameter allows a good match to be achieved for both the noise figure and the optimum source impedance.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Ghione, G.
Bonani, F.
Pirola, M.
Naldi, C.U.
Sporkmann, T.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:45
URI

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