Microwave characterization and comparison of performance of GaAs based MESFETs, HEMTs and HBTs operating at high ambient temperatures

Fricke, K. ; Lee, W.Y. ; Wurfl, J. ; Krozer, V. ; Hartnagel, H.L. (1992) Microwave characterization and comparison of performance of GaAs based MESFETs, HEMTs and HBTs operating at high ambient temperatures. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

For the first time microwave measurements at ambient temperatures up to 300°C have been performed on especially fabricated GaAs MESFETs, GaAs/AlGaAs HEMTs and HBTs, de­signed for continous operation at ambient temperatures up to 300°C with high reliability. A technology is presented which allows the realization of MESFET, HEMT and HBT device per­formance at elevated ambient temperatures. Ohmic and Schottky contacts have been realized with Ni-Ge-Au-Ni~W5-Si2-Au and LaB6-Au, respectively. These results open new possibilities for various applications of such transistors.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Fricke, K.
Lee, W.Y.
Wurfl, J.
Krozer, V.
Hartnagel, H.L.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:46
URI

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