Rapid thermal annealing of Si implanted GaAs in Arsenic overpressure

Bianchi, S. ; Castelli, A. ; Ehrenheim, A. ; Vidimari, F. (1990) Rapid thermal annealing of Si implanted GaAs in Arsenic overpressure. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

A new method of rapid thermal annealing (RTA) in arsenic over­pressure using a high thermal mass reactor and a very low thermal mass sub­strate holder has been developed. Efficient activation of Si implantation has been obtained only with proper As overpressure. The design of the substrate holder allowed a very uniform activation of the implanted layers as well as a negligible formation of dislocation slips. This method of rapid thermal annealing was successfully applied to the fabrication of broadband 4-8 GHz MMIC amplifiers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bianchi, S.
Castelli, A.
Ehrenheim, A.
Vidimari, F.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:47
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