Simulation of high frequency dispersion phenomena in equivalent circuits for microwave FET-type devices

Camacho-Peñalosa, C. ; Martin-Guerrero, T. ; Entrambasaguas-Muñoz, J.T. (1992) Simulation of high frequency dispersion phenomena in equivalent circuits for microwave FET-type devices. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Abstract

Two different mechanisms are proposed to explain and simulate the high frequency dispersion phenomena in equivalent circuits for microwave FET-type devices: a) transversal propagation along die metallizations of the device, and b) limitations in the intrinsic equivalent circuit. The first mechanism is accounted for by using a distributed equivalent circuit, while the second one is modelled by means of a modified intrinsic equivalent circuit.

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