Optimum loading for microwave low noise GaAs MESFET

Capponi, G. ; Di Maio, B. ; Livreri, P. (1992) Optimum loading for microwave low noise GaAs MESFET. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

In this work it is proven that on the load reflection coefficient plane of a microwave low noise GaAs MESFET amplifier a locus of optimum values {TLO } does exist depending only on the transistor noise and scattering parameters and on the operating power gain to be obtained. The existence of this locus is proven in a rigorous way for lossless input equalizer amplifiers. The knowledge of {TLO } allows us to foresee the noise figure, the amplifier input reflection coefficient and any other performance useful in the low noise amplifier design.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Capponi, G.
Di Maio, B.
Livreri, P.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:48
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