Analysis and optimization of single quantum well MODFETs

Shawki, Tarek ; Salmer, Georges (1990) Analysis and optimization of single quantum well MODFETs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

Based on 2D hydrodynanuc energy model which features transient simulation of degenerate hot elec­tron transport in submicron MODFETs, we present a detailed analysis of single quantum well (SQW) AlGaAs/GaAs/AlGaAs MODFETs which are proposed to enhance and optimize the device millimetric performance. The structure have been studied for different QW widths as well as different buffer AlGaAs transport parameters. It is demonstrated that hot electron effects set an upper limit on the maximum available gain and maximum oscillation frequency of the structure.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Shawki, Tarek
Salmer, Georges
Subjects
DOI
Deposit date
02 Feb 2006
Last modified
17 Feb 2016 14:48
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