Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications

Mokerov, V.G. ; Fedorov, Yu.V. ; Hook, A.V. ; Velikoski, L.E. (2000) Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

Modulation doped N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs-heterostructures with InAs-quantum dots have been grown and investigated. Their photoluminescence spectra and electrical transport properties both in low and high electric fields were studied. Using these structures, modulation doped FET’s have been fabricated and analyzed. It was demonstrated that the quantum dot FET’s present the new type of the hot electron devices, promising for high frequency applications.

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