Electrical measurement of the junction temperature and thermal resistance of HBTs

Melczarsky, Ilan ; Lonac, Julio A. ; Filicori, Fabio (2006) Electrical measurement of the junction temperature and thermal resistance of HBTs. IEEE Microwave and Wireless Components Letters, 16 (2). pp. 78-80. ISSN 1531-1309
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Abstract

A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.

Abstract
Tipologia del documento
Articolo
Autori
AutoreAffiliazioneORCID
Melczarsky, Ilan
Lonac, Julio A.
Filicori, Fabio
Parole chiave
heterojunction bipolar transistors (HBTs), thermal impedance, power bipolar transistors, temperature measurement, thermal resistance measurement
Settori scientifico-disciplinari
ISSN
1531-1309
DOI
Data di deposito
28 Mar 2006
Ultima modifica
31 Ott 2012 11:35
URI

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