Electrical measurement of the junction temperature and thermal resistance of HBTs

Melczarsky, Ilan ; Lonac, Julio A. ; Filicori, Fabio (2006) Electrical measurement of the junction temperature and thermal resistance of HBTs. IEEE Microwave and Wireless Components Letters, 16 (2). pp. 78-80. ISSN 1531-1309
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Abstract

A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.

Abstract
Document type
Article
Creators
CreatorsAffiliationORCID
Melczarsky, Ilan
Lonac, Julio A.
Filicori, Fabio
Keywords
heterojunction bipolar transistors (HBTs), thermal impedance, power bipolar transistors, temperature measurement, thermal resistance measurement
Subjects
ISSN
1531-1309
DOI
Deposit date
28 Mar 2006
Last modified
31 Oct 2012 11:35
URI

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