Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results

Sleiman, A. ; Di Carlo, A. ; Tocca, L. ; Fiordiponti, R. ; Lugli, P. (2000) Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

In this paper the effect of a body contact to increase the breakdown voltage in GaAs based pseudomorphic HEMT has been theoretically investigated. The body contact is formed by a p-doped substrate connected to an ohmic back contact. By using a Monte Carlo simulation we show that the body contact reduces the density of holes generated by impact ionization and prevents holes from accumulating in the channel. ‘The breakdown effect is quenched as the density of acceptors in the substrate increases. This extends the range of the usable drain voltages.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Sleiman, A.
Di Carlo, A.
Tocca, L.
Fiordiponti, R.
Lugli, P.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:43
URI

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