Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers

Tkachenko, Y. ; Wei, C. ; Sprinkle, S. ; Gering, J. ; Lee, J. ; Kao, T. ; Zhao, Y. ; Ho, W. ; Sun, M. ; Bartle, D. (2001) Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

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Abstract

Performance of an HBT and a Quasi Enhancement Mode PHEMT (QE-PHEMT) unit cell is compared for wireless telephone PA applications. While the HBT has advantages of smaller chip size and single supply with no drain switch operation, the QE-PHEMT has higher efficiency and better low voltage characteristics. PA power control and device design trade-offs for both technologies are also discussed.

Abstract

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