Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers

Tkachenko, Y. and Wei, C. and Sprinkle, S. and Gering, J. and Lee, J. and Kao, T. and Zhao, Y. and Ho, W. and Sun, M. and Bartle, D. (2001) Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
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Abstract

Performance of an HBT and a Quasi Enhancement Mode PHEMT (QE-PHEMT) unit cell is compared for wireless telephone PA applications. While the HBT has advantages of smaller chip size and single supply with no drain switch operation, the QE-PHEMT has higher efficiency and better low voltage characteristics. PA power control and device design trade-offs for both technologies are also discussed.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Tkachenko, Y.
Wei, C.
Sprinkle, S.
Gering, J.
Lee, J.
Kao, T.
Zhao, Y.
Ho, W.
Sun, M.
Bartle, D.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:47
URI

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