A Novel method for the Higher Order components extraction of the Channel current in GaAs MESFET

Kim, Youngsik ; Kim, JiYoun ; Kim, Sungwoo ; Kim, Bumman (2001) A Novel method for the Higher Order components extraction of the Channel current in GaAs MESFET. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

We propose a new simple and accurate method for the higher order Taylor coefficient extraction of the channel current in GaAs MESFET. In this method, the nonlinear channel currents are directly measured through a hole current sensor and spectrum analyzer. Taylor coefficients up to 3rd order have been successfully extracted from the measured currents of the low frequency(4MHz, 25MHz) two-tone test, and a resonator is added to the load to remove the gate frequency component from the drain voltage, which makes the problem simple. The proposed extraction procedure is simple and straightforward.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Kim, Youngsik
Kim, JiYoun
Kim, Sungwoo
Kim, Bumman
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:33
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