A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC

Bessemoulin, A. and Quentin, P. and Thomas, H. and Geiger, D. (2002) A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

The performance of a very compact power amplifier MMIC for Q-band applications is reported. Using a 4-inch 0.25-µm GaAs power PHEMT process, this 4-stage amplifier achieved a linear gain of 19 dB over the 36 to 45 GHz frequency range, with an output power at 1-dB gain compression of 26 dBm (P-1dB=400 mW), and a saturated output power of 0.5 Watt (Psat=27 dBm), for a chip size of only 2.25 mm 2 (1.25 × 1.8 mm 2 ). Compared to state-of-the-art power amplifier MMICs operating in the 36-43 GHz frequency range, the combined output power- and gain- densities per chip area are nearly a factor two higher, namely 220 mW/mm 2 and 8.5 dB/mm 2 .

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bessemoulin, A.
Quentin, P.
Thomas, H.
Geiger, D.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:49
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