Influence of backside metallization on a coplanar X-band LNA

Follmann, R. ; Langgartner, G ; Borkes, J. ; Wolff, I. (2002) Influence of backside metallization on a coplanar X-band LNA. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

In this paper the influence of the backside metallization on a coplanar X-band low noise amplifier MMIC is described. First, we demonstrate the selection of transistor devices including the mod-elling especially with respect to the extraction of RF noise parame-ters. After that the simulation results and the layout of the LNA are presented, neglecting backside effects on coplanar circuits. Complet-ing measurements on the fabricated LNA show the influence of the backside metallization in comparison with simulation results.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Follmann, R.
Langgartner, G
Borkes, J.
Wolff, I.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:49
URI

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