Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs

Hsu, Shawn S.H. and Valizadeh, Pouya and Pavlidis, Dimitris and Moon, Jeong S. and Micovic, M. and Wong, Danny and Hussain, T. (2002) Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

Linearity and efficiency of AlGaN/GaN MODFETs were investigated under large-signal conditions. The power-added-efficiency (PAE) of 0.25´ 200 mm 2 devices was found to be ~33% and ~45 % without and with harmonic tuning. Third-order Intermodulation (IMD3) was also measured using the two-tone technique. Third-order Intercept Point (IP3) of ~ 29 dBm at Pin= 15 dBm was obtained at f0= 5 GHz (Df= 10 MHz). Load-pull contours showed that thempedance values for best PAE and Pout are very close. IP3 was found to be insensitive to the gate bias voltage. In addition, high efficiency and high linearity can be achieved simultaneously with the assistance of harmonic termination.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Hsu, Shawn S.H.
Valizadeh, Pouya
Pavlidis, Dimitris
Moon, Jeong S.
Micovic, M.
Wong, Danny
Hussain, T.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:50
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